AON6936 30v dual asymmetric n-channel alphamos general description product summary q1 q2 30v 30v i d (at v gs =10v) 32a 44a r ds(on) (at v gs =10v) <4.9m w <2m w r ds(on) (at v gs = 4.5v) <8.4m w <2.8m w 100% uis tested application 100% rg tested v ds ? latest trench power alphamos ( mos lv) technology ? very low rds(on) at 4.5v gs ? low gate charge ? high current capability ? rohs and halogen-free compliant ? dc/dc converters in computing, servers, and pol ? isolated dc/dc converters in telecom and industri al dfn5x6b top view bottom view symbol v ds v gs i dm i as e as vds spike v spike t j , t stg parameter symbol typ q1 typ q2 max q1 max q2 t 10s 29 24 35 29 steady-state 56 50 67 60 steady-state r q jc 3.3 1.2 4 1.5 -55 to 150 c units thermal characteristics junction and storage temperature range maximum junction-to-case c/w c/w maximum junction-to-ambient a d r q ja maximum junction-to-ambient a c/w power dissipation a p dsm w t a =70c t c =100c p d continuous drain current g 44 power dissipation b 50 mj avalanche current c continuous drain current a 18 25 i d 32 units a t a =25c i dsm t a =70c 176 22 w a 40 2.3 2.7 83 12 33 v 32 t c =25c t c =100c t a =25c 3.6 4.3 128 36 100ns 31 avalanche energy l=0.05mh c 36 pulsed drain current c 20 34 gate-source voltage parameter 32 t c =25c 26 63 max q1 max q2 absolute maximum ratings t a =25c unless otherwise noted v v drain-source voltage 30 top view pin1 bottom view rev 0 : july 2012 www.aosmd.com page 1 of 10
AON6936 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.5 2 2.5 v 4 4.9 t j =125c 5.3 6.5 6.7 8.4 m w g fs 125 s v sd 0.7 1 v i s 32 a c iss 984 pf c oss 485 pf c rss 66 pf r g 0.7 1.4 2.1 w q g (10v) 17.4 24 nc drain-source breakdown voltage i d =250 m a, v gs =0v q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) static drain-source on-resistance v gs =0v, v ds =15v, f=1mhz switching parameters m w gate resistance v gs =0v, v ds =0v, f=1mhz i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage v gs =10v, i d =20a reverse transfer capacitance total gate charge maximum body-diode continuous current g input capacitance output capacitance dynamic parameters q g (10v) 17.4 24 nc q g (4.5v) 8.3 12 nc q gs 2.8 nc q gd 2.8 nc t d(on) 21.8 ns t r 21.8 ns t d(off) 51.3 ns t f 7.8 ns t rr 14 ns q rr 22 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. this product has been designed and qualified for th e consumer market. applications or uses as critical i f =20a, di/dt=500a/ m s body diode reverse recovery time turn-off fall time total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-on delaytime turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0 : july 2012 www.aosmd.com page 2 of 10
AON6936 q1-channel: typical electrical and thermal characteristics 17 52 10 0 20 40 60 80 100 1.5 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 4 6 8 10 r ds(on) (m w ww w ) 1.2 1.4 1.6 normalized on -resistance v gs =4.5v i = 20 a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v 0 20 40 60 80 100 120 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 4.5v 10v 3v 3 . 5 v 10 0 18 40 0 2 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 0 25 50 75 100 125 150 175 normalized on temperature (c) figure 4: on-resistance vs. junction temperature (note e) i d = 20 a 2 3 4 5 6 7 8 3 4 5 6 7 8 9 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) v gs =10v i d =20a 25 c 125 c rev 0 : july 2012 www.aosmd.com page 3 of 10
AON6936 q1-channel: typical electrical and thermal characteristics 1.0 10.0 100.0 i d (amps) 1ms 100us dc r ds(on) limited 10 m s 10 ms 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 300 600 900 1200 1500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 400 600 800 1000 power (w) c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 0.0 0.1 0.01 0.1 1 10 v ds (volts) figure 9: maximum forward biased safe operating area (note f) t j(max) =150 c t c =25 c 0 200 0.00001 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =4 c/w rev 0 : july 2012 www.aosmd.com page 4 of 10
AON6936 q1-channel: typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 10 20 30 40 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 100 1000 10000 power (w) t a =25 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 10 0.00001 0.001 0.1 10 1000 pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) r q ja =67 c/w rev 0 : july 2012 www.aosmd.com page 5 of 10
AON6936 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v 1.6 2 t j =125c 2 2.5 2.2 2.8 m w g fs 91 s v sd 0.7 1 v i s 44 a c iss 4178 pf c oss 1979 pf c rss 261 pf r g 0.3 0.7 1.1 w q g (10v) 63.7 86 nc q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v v gs =10v, i d =20a diode forward voltage r ds(on) static drain-source on-resistance switching parameters maximum body-diode continuous current g input capacitance output capacitance i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =20a i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge reverse transfer capacitance v gs =0v, v ds =15v, f=1mhz forward transconductance dynamic parameters q g (10v) 63.7 86 nc q g (4.5v) 29 40 nc q gs 10.6 nc q gd 10.5 nc t d(on) 39.8 ns t r 28.5 ns t d(off) 92.5 ns t f 15 ns t rr 20.6 ns q rr 46 nc components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. this product has been designed and qualified for th e consumer market. applications or uses as critical body diode reverse recovery time v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-on delaytime turn-off fall time total gate charge turn-on rise time body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge i f =20a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0 : july 2012 www.aosmd.com page 6 of 10
AON6936 q2-channel: typical electrical and thermal characteristics 17 52 10 0 20 40 60 80 100 1.5 2 2.5 3 3.5 4 4.5 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 1.0 1.5 2.0 2.5 3.0 r ds(on) (m w ww w ) 1 1.2 1.4 normalized on -resistance v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 6v 4.5v 10v 3v 3.5v 10 0 18 40 0.0 0.5 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 0 25 50 75 100 125 150 175 normalized on temperature (c) figure 4: on-resistance vs. junction temperature (note e) 0 0.5 1 1.5 2 2.5 3 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev 0 : july 2012 www.aosmd.com page 7 of 10
AON6936 q2-channel: typical electrical and thermal characteristics 1.0 10.0 100.0 i d (amps) 10 m s 1ms dc r ds(on) limited 100 m s 200 300 400 500 600 power (w) 0 2 4 6 8 10 0 10 20 30 40 50 60 70 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =20a t j(max) =150 c t c =25 c 10ms 40 0.0 0.1 0.01 0.1 1 10 v ds (volts) figure 9: maximum forward biased safe operating area (note f) t j(max) =150 c t c =25 c 0 100 200 0.0001 0.001 0.01 0.1 1 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q jc =1.5 c/w rev 0 : july 2012 www.aosmd.com jpage 8 of 10
AON6936 q2-channel: typical electrical and thermal characteristics 0 20 40 60 80 100 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 100 1000 10000 power (w) t a =25 c 0 20 40 60 80 100 120 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 40 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 10 0.00001 0.001 0.1 10 1000 pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) r q ja =60 c/w rev 0 : july 2012 www.aosmd.com page 9 of 10
AON6936 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0 : july 2012 www.aosmd.com page 10 of 10
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